Evidence of carbon–carbon bond formation on GaAs(100)via Fischer–Tropsch methylene insertion reaction mechanism

Abstract

Sequential multiple methylene (CH2) insertions into adsorbed methyl species on clean gallium-rich GaAs(100)-(4 x 1) occurs to form higher alkenes (ethene, propene, butene) and two higher alkyl iodides (iodoethane, iodopropane), not reported for a semiconductor surface previously.