Abstract
The effects of electron irradiation on the diethylsilane (DES) dosed Si(100) surface were studied using temperature programmed desorption and high-resolution electron energy loss spectroscopy (HREELS). Previous research has shown that without electron irradiation, carbon is thermally removed from the DES/Si(100) surface via a β-hydride elimination process that is characterized by desorption of ethylene at 725 K followed by desorption of hydrogen at 810 K. After irradiating the surface with electrons, HREELS data showed that the electrons dissociated ethyl groups and deposited CH x groups on the surface. Furthermore, electron irradiation of DES/Si(100) resulted in thermal desorption of ethylene at 810 K, with only trace amounts desorbing at 725 K. Hydrogen desorbs at 810 K but also exhibits a high temperature shoulder due to desorption of hydrogen from surface carbon deposited by electrons. This is indicative of an unexplored electron-induced channel for desorption of ethylene from DES/Si(100).
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