Abstract
The extreme dopant diffusivities observed in silicon for donor concentrations in excess of 2×1020cm−3 have recently been explained by a vacancy percolation model proposing that a network of fast diffusion paths is formed when the average distance of the donors becomes equal to or less than the fifth nearest-neighbour distance. Here, we report on evidence by means of119Sn Mossbauer spectroscopy for the postulated high vacancy concentration in the percolation cluster.
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