Abstract
Among one-dimensional transition-metal trichalcogenides, TaSe3 is unconventional in many respects. One is its strong topological semimetallicity as predicted by first-principles calculations. We report the experimental investigations of the electronic properties of one-dimensional-like TaSe3 single crystals. While the b-axis electrical resistivity shows good metallicity with a high residual resistivity ratio greater than 100, an extremely large magnetoresistance is observed reaching ≈7 × 103% at 1.9 K for 14 T. Interestingly, the magnetoresistance follows the Kohler’s rule with nearly quadratic magnetic field dependence, consistent with the electron–hole compensation scenario as confirmed by our Hall conductivity data. Both the longitudinal and Hall conductivities show Shubnikov-de Haas oscillations with two frequencies: Fα ≈ 97 T and Fβ ≈ 186 T. Quantitative analysis indicates that Fα results from the two-dimensional-like electron band with the non-trivial Berry phase [1.1π], and Fβ from the hole band with the trivial Berry phase [0(3D) − 0.16π(2D)]. Our experimental findings are consistent with the predictions based on first-principles calculations.
Highlights
Topological materials have ushered in a new era in condensed matter research since the discovery of the quantum Hall effect.Over the years, a few material systems have been reported as topological insulators such as Bi1−xSbx[1] and Bi2Se32, topological semimetals such as Cd3As23–5, Na3Bi6,7, YbMnBi28, BaMnSb29, and topological superconductors such as CuxBi2Se3, Sn1−xInTe, and others[10,11,12]
In a topological Dirac semimetal (TDSM), spin–orbit coupling (SOC) does not open up a gap, and the Dirac points are protected by the time-reversal and inversion symmetries[3,15]
We report the experimental investigation of the Fermi surface topology of TaSe3 single crystals
Summary
Topological materials have ushered in a new era in condensed matter research since the discovery of the quantum Hall effect.Over the years, a few material systems have been reported as topological insulators such as Bi1−xSbx[1] and Bi2Se32, topological semimetals such as Cd3As23–5, Na3Bi6,7, YbMnBi28, BaMnSb29, and topological superconductors such as CuxBi2Se3, Sn1−xInTe, and others[10,11,12]. 1234567890():,; Fig. 1 Crystal structure, magnetization, and electrical resistivity of TaSe3. This indicates a diamagnetic behavior in TaSe3, which is supported by the negative and linear magnetic field dependence of the magnetization [M(H)], measured at T = 1.85 K as shown in the inset of Fig. 1c.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
