Abstract
The dependence of the Hall mobility on DX center occupancy in a sample of Si-doped Al0.3Ga0.7As is measured at 40 K. The occupancy of the DX centers is adjusted by means of the persistent photoconductivity effect. The theoretical mobility is calculated for both the neutral and negative charge state models of the DX center. The calculation includes the effect of dynamic screening, and uses values of the impurity concentrations measured by both Hall effect and secondary ion mass spectroscopy. The experimental results are found to be in much better agreement with the neutral charge state model.
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