Abstract
Microstructural reactions of PdGe ohmic contact to n-type GaAs were investigated using x-ray diffraction, Auger electron spectroscopy, and slow positron beam. The results were compared with electrical properties to interpret the ohmic contact formation mechanism for the Ge/Pd/n-type GaAs system. The lowest contact resistance of 1.7 Ω mm and the formation of a PdGe compound are observed at the annealing temperature of 240 °C. Slow positron beam results show that Ga vacancies are produced below PdGe during the formation of PdGe ohmic contact to n-type GaAs. This means the existence of n+-GaAs layer below PdGe because Ga vacancy concentration increases with n-type impurity concentration. This supports that the n+-GaAs layer is a regrown layer decomposed from PdxGaAs containing excess Ge atoms during annealing.
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