Abstract
Localization of excitons in potential wells due to fluctuations in the local In content in GaInN/GaN quantum wells is now widely believed to lead to quantum-dot-like states. This is even thought to be of major importance for the operation of GaInN-based laser diodes. Using photoluminescence excitation spectroscopy we show that there is indeed a strong localization of excitons in such quantum wells at low temperature. On the other hand, a comparison of room temperature absorption spectra with optical gain spectra indicates just a “normal” exciton-to-plasma transition and no relevance of localization for laser operation.
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