Abstract
ABSTRACTAl/p-Si Schottky barriers formed on wafers implanted with 10–20 keV Ar exhibit low-temperature electrical properties characteristic of grain boun1dary transport Subsequent low-energy (0.4 keV), high fluence ( ∼ IOE18 cm−2) H implant is found to passivate the grain boundaries of the Ar implant-induced microcrystals. Extremely high Al/p-Si Schottky barrier heights are obtained following the dual implants, and deep level transient spectroscopy (DLTS) measurements reveal that H also alters the properties of traps introduced by the Ar implant, thus improving the diode characteristics.
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