Abstract
We examined the IR-active 2000 – 2100 cm −1 absorption peak and the photoconductivity of hydrogenated amorpous Si-C (a-SiC:H) alloys deposited from a glow discharge. We find that the existence of a frequency-shifted mode centered at 2070 cm −1 and the significant drop in photoconductivity observed to occur in a-SiC:H films with very small (greater than 1.5 at.%) carbon content can be satisfactorily explained by the presence of a microvoid structure. We also suggest that the deterioration in a-SiC:H electronic properties might be due almost entirely to microstructural effects, and therefore, if this microstructure could be eliminated, a high band gap a-SiC:H material with a photoresponse as good as that of glow discharge a-Si:H would be possible.
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