Abstract
We have measured the magneto-transport properties of Si:SiGe quantum wells grown on (001) and (118) substrates as a function of applied bias. While the on-axis samples show conventional effects due to electron heating, the tilted substrates display a markedly different behaviour. A Fourier transform analysis of the Shubnikov-de Haas oscillations is presented. The FFT power spectrum from (118) quantum well wires aligned along the tilt direction shows evidence that the miniband, which is known to exist in these tilted samples, is being occupied with electrons excited by the electric field.
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