Abstract
A deep level transient spectroscopy (DLTS) study of electronic defect levels in 15 MeV electron irradiated n-type float-zone Si samples with different oxygen contents has been performed. Heat treatment at 250 \ifmmode^\circ\else\textdegree\fi{}C results in a shift of both the singly negative and doubly negative divacancy $({\mathrm{V}}_{2})$ related DLTS peaks. This is due to annealing of ${\mathrm{V}}_{2}$ and the formation of a new double acceptor center. The formation of the new center has a close one-to-one correlation with the annealing of ${\mathrm{V}}_{2}.$ The annealing rate of ${\mathrm{V}}_{2}$ and the formation rate of the new center are close to proportional with the oxygen content in the samples. The new center is identified as a divacancy-oxygen complex.
Published Version
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