Abstract
We report the first evidence that the $\ensuremath{\Gamma}\ensuremath{-}X$ transfer mechanism plays a significant role in carrier transport in type-I semiconductor superlattices under an electric field. An anomalously delayed photocurrent was observed in a GaAs/AlAs type-I superlattice under ultrashort optical pulse excitation. This phenomenon can be explained by a switch of the electron transport path from $\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}$ to $\ensuremath{\Gamma}\ensuremath{-}X\ensuremath{-}\ensuremath{\Gamma}\ensuremath{-}X$, caused by an electric-field induced change of the subband alignment of the second $\ensuremath{\Gamma}$ state ($\ensuremath{\Gamma}2$) in the well and the $X1$ state in the adjacent barrier.
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