Abstract
Cyclotron-resonance (CR) experiments have been performed on InAs/GaSb/AlSb double structures, in which electron and hole layers are separated by AlSb barriers. The strength of the electron-hole coupling is altered by varying the barrier width. Our data reveal that properties of InAs/GaSb systems with AlSb barriers thinner than 1.5 nm are entirely determined by interlayer tunneling and the CR features in such samples can be explained by hybridization between states in the InAs conduction band and in the GaSb valence band.
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