Abstract
Threshold voltage (VT) is an important parameter in phase change memory (PCM), marking the minimum voltage needed to program the memory device. In this work, we demonstrate that subthreshold pulses at V < VT can induce an increase of VT. The pulse-induced modification of VT is explained primarily due to the Joule heating during VT measurement accelerating the structural relaxation in the amorphous phase-change material. Our results demonstrate that VT can be adjusted through applied voltage pulses in the subthreshold regime, allowing the stabilization of programmed PCM states.
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