Abstract
InAs quantum dots grown on InGaAlAs lattice matched to InP have been investigated for use in quantum dot infrared photodetectors. Intraband photocurrent of samples with different doping levels have been measured and with the help of a 3D effective mass calculation, the main absorption peak has been identified. Moreover, the reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent.
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