Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonance.

Abstract

The microscopic structure of a paramagnetic arsenic antisite-related defect in GaAs electron irradiated at room temperature has been studied using optically detected electron-nuclear double resonance (ODENDOR). In addition to the ODENDOR lines of the nearest and next-nearest As ligands those of a Ga atom have been observed. The analysis of the Ga ODENDOR lines gives evidence to identify this As antisite-related defect with an anti-structure-pair ${\mathrm{As}}_{\mathrm{Ga}\mathrm{\ensuremath{-}}}$${\mathrm{Ga}}_{\mathrm{As}}$, where the ${\mathrm{Ga}}_{\mathrm{As}}$ is diamagnetic and located in the next-nearest As shell of the As antisite.