Abstract
This work reports on a piezotronic n-p-n bipolar heterojunction transistor (PBJT) intended for AI-sound recognition with low power consumption footprint. An organic polymer (Poly (3-hexylthiophene)) as Base is sandwiched between two inorganic piezoelectric semiconductor ZnO layers as Emitter and Collector, respectively to form a vertically-stacked heterogeneous n-p-n BJT, which differs from the traditional BJT in that it can provide either current or voltage as an output signal to favor application’s preference. It can be regarded as two back-to-back auto-biased piezotronic heterojunction diodes where Base-Collector diode is reversely biased and Base-Emitter one is in a forward bias (or vice versa) upon sound wave stimuli. In addition, polarized charges generated at Emitter and Collector sides redistribute and as a result, give a significant enhancement in the output voltage. With machine learning AI, low frequency (LF) sound detection, mapping, and recognition have been demonstrated by this device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.