Event-Driven Approach With Time-Scale Hierarchical Automaton for Switching Transient Simulation of SiC-Based High-Frequency Converter

Abstract

On the emerging development of SiC MOSFET, the switching frequency of power converters has been pushed to the order of hundreds of kilohertz or even megahertz to improve power density. However, the state-of-the-art simulations for such high-frequency power electronics circuits are usually time-consuming, blocking the studies of long dynamics such as several seconds. What’s worse, adopting physical models to simulate the turn-on and turn-off transients leads to high stiffness and therefore convergence problems. In this paper, an event-driven approach is proposed to improve the solving speed and simulation stability of SiC based high-frequency converters. A time-scale hierarchical automaton is proposed to model the system, where piecewise analytical transient model for SiC MOSFET is established as the second layer in the automaton to simulate the switching transients with improved numerical stability. Simulation of the system is driven by discrete events in the automaton. A 3.3 kW 79.1 kHz wireless power transfer system for the wireless charging of electric vehicle is studied. Compared with ideal switch model in Simulink and physical switch model in LTspice, 60-fold and 400-fold increases in terms of simulation speed with same level of accuracy are achieved respectively. The simulated results are also attested to by experimental verifications.