Abstract
The plasma ion sources play a very important role in the plasma immersion ion implantation (PIII) process. In this paper, we report on our newly designed evaporation–glow discharge hybrid ion source for PIII. The high negative substrate bias not only acts as the plasma producer but also provides the implantation voltage. The sulfur vapor gas glow discharge shows that the electrons in the plasma are focused to the orifice of the inlet tube, thereby helping the ionization of the fleeing vapor gases. The sulfur depth profile confirms that this evaporation–glow discharge hybrid source is effective for materials with a low melting point and high vapor pressure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
