Abstract
Both resistive and insulating cermets were obtained from experiments on co-evaporated materials. Stable resistivities in the 1000 micro-ohm-centimeter range were obtained from mixtures of germanium and chromium, and from a reaction product of aluminum and alumina. Glassy dielectric films were obtained from reaction products of aluminum and alumina, and from aluminum and silicon monoxide. The factors that control these co-evaporation processes are explained as related to coincident vapor pressures at specific temperatures. The in situ reaction of the constituents to form a third material having a higher vapor pressure is considered. Applications of these thin-film cermets to hybrid integrated circuit technology is discussed.
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