Abstract
ABSTRACTIn this study, we evaluate the electrical characteristics of the silicon on insulator (SOI) layer made by the wafer bonding method using a photoconductivity modulation method, in other words, noncontact laser beam induced conductivity/current (LBIC) method. The He-Ne laser pulse (λ= 633nm, pulse width=2ms) is used as the carrier-injection light source.The detected signal intensity decreases at the void area as compared with at the center area of the SOI layer where there are no voids. The positions of the voids revealed by the proposed method are in good agreement with those by X-ray topography. We also measure the lifetime using the photoconductivity decay method using the laser diode. The lifetime at the void area is much shorter than that at the center area. It is considered that the decrease in the detected signal intensity at the void area is due to reduction in the minority carrier lifetime.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
