Evaluation on ESD robustness of LTPS diode and TFT device by transmission line pulsing (TLP) technique

Ming-Dou Ker Ming-Dou Ker,Tang-Kui Tseng Tang-Kui Tseng,An Shih An Shih,Sheng-Chieh Yang Sheng-Chieh Yang,Yaw-Ming Tsai Yaw-Ming Tsai

doi:10.1109/vtsa.2003.1252559

Ming-Dou Ker Ming-Dou Ker, Tang-Kui Tseng Tang-Kui Tseng + Show 3 more

Open Access

https://doi.org/10.1109/vtsa.2003.1252559

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Abstract

ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the It2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices after TLP stress are considered into failure threshold judgment. From the experimental results, It2 of LTPS diodes under forward-biased stress is better than that of LTPS TFT devices. Furthermore, the It2 of LTPS TFT devices under reverse-biased stress is more robust than it under forward-biased stress. Such investigation results can help us to design a successful ESD protection for the circuits on glass.

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