Evaluation of Young’s modulus of imprinted hydrogen silsesquioxane pillar after residual layer removal by reactive ion etching

Abstract

Nanoimprint lithography has two basic steps. The first is the imprint step in which a mold with nanostructures on its surface is pressed into a resin film on a substrate, followed by removal of the mold. The second step is the residual layer removal by a reactive ion etching (RIE). There is no report whether the properties of the imprinted structure after RIE change or not. In this work, the authors evaluated the Young's modulus of the imprinted pillar after residual layer removal by RIE. In this experiment, hydrogen silsesquioxane (HSQ), a type of spin-on-glass, was used as an imprint material. The residual layer was etched by RIE using CHF3 gas. The Young's modulus of imprinted pillar after RIE was measured via cantilever method. The Young's modulus of HSQ pillar after RIE was twice as much as that of HSQ pillar before RIE. From the Fourier transform infrared measurement, it was founds the chemical structure of HSQ was changed by forming network structure due to heating by RIE plasma energy. These results indicate that the mechanical property of imprinted structure was changed in the residual layer removal step by using RIE.