Abstract
In this work, Y 2O 3 was evaluated as a gate insulator for thin film transistors fabricated using an amorphous InGaZnO 4 (a-IGZO) active layer. The properties of Y 2O 3 were examined as a function of various processing parameters including plasma power, chamber gas conditions, and working pressure. The leakage current density for the Y 2O 3 film prepared under the optimum conditions was observed to be ~ 3.5 × 10 − 9 A/cm 2 at an electric field of 1 MV/cm. The RMS roughness of the Y 2O 3 film was improved from 1.6 nm to 0.8 nm by employing an ALD (Atomic Layer Deposition) HfO 2 underlayer. Using the optimized Y 2O 3 deposition conditions, thin film transistors (TFTs) were fabricated on a glass substrate. The important TFT device parameters of the on/off current ratio, sub-threshold swing, threshold voltage, and electric field mobility were measured to be 7.0 × 10 7, 0.18 V/dec, 1.1 V, and 3.3 cm 2/Vs, respectively. The stacked insulator consisting of Y 2O 3/HfO 2 was highly effective in enhancing the device properties.
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