Abstract
The effect of deposition temperature and film thickness on the work function of TiSiN gate electrodes has been studied. It is shown that the work function of TiSiN can be tuned from 4.28–4.74eV on SiO2, 4.40–4.79eV on HfO2, and 4.44–4.83eV on HfSiOx. For high-k dielectrics, the work function can be tuned by 200meV on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore, TiSiN deposition at high temperature increases the work function to 4.87eV while Si implantation increases it to 4.93eV, making TiSiN a good p-type metal candidate.
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