Abstract
This paper evaluates the benefits of three-level topologies as alternatives to two-level topologies in low-voltage converters primarily operated in rectifier mode. The main evaluation aspects are input filter size, semiconductor losses, maximum switching frequency, part count, initial cost, and life cycle cost. Semiconductor loss characteristics of various three-level topologies are discussed. A detailed converter comparison is based on a 100-kW 400-V/sub rms/ rectifier using commercially available Si insulated gate bipolar transistor modules.
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