Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction**Project supported by the Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), the Fundamental Research Funds for the Central Universities (Grant No. 17-H863-04-ZT-001-019-01),

Abstract

The analysis of threading dislocation density (TDD) in Ge-on-Si layer is critical for developing lasers, light emitting diodes (LEDs), photodetectors (PDs), modulators, waveguides, metal oxide semiconductor field effect transistors (MOSFETs), and also the integration of Si-based monolithic photonics. The TDD of Ge epitaxial layer is analyzed by etching or transmission electron microscope (TEM). However, high-resolution x-ray diffraction (HR-XRD) rocking curve provides an optional method to analyze the TDD in Ge layer. The theory model of TDD measurement from rocking curves was first used in zinc-blende semiconductors. In this paper, this method is extended to the case of strained Ge-on-Si layers. The HR-XRD scan is measured and Ge (004) single crystal rocking curve is utilized to calculate the TDD in strained Ge epitaxial layer. The rocking curve full width at half maximum (FWHM) broadening by incident beam divergence of the instrument, crystal size, and curvature of the crystal specimen is subtracted. The TDDs of samples A and B are calculated to be 1.41 × 108 cm−2 and 6.47 × 108 cm−2, respectively. In addition, we believe the TDDs calculated by this method to be the averaged dislocation density in the Ge epitaxial layer.