Abstract

We fabricated Ga-Sn-O (GTO) thin film thermoelectric conversion devices at atmospheric pressure by mist chemical vapor deposition (Mist CVD) method and evaluated the power factor (PF). The best PF was 0.050 mW / mK <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , with a Seebeck coefficient of -75 µV / K and a conductivity of 89 S / cm.

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