Abstract
The formation condition, microstructure, and growth kinetics of the WOx layer for WOx resistive random access memory are investigated. To understand the optimal condition for the rapid thermal oxidation process which forms the WOx layer, various annealing temperature and annealing time are systemically studied through transmission electron microscopy, X-ray diffraction, Raman spectra analyses and electrical characterizations. The growth kinetics for WOx under rapid thermal oxidation is found similar to the one for thermal oxidation on silicon. The electrical forming voltages of the WOx cells are also found independent from the oxide thickness, which further suggests the switching behavior of WOx resistive random access memory takes place at the interface but not the bulk.
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