Abstract
AbstractThe effectiveness of the silicon capping technique in ultrashallow secondary ion mass spectrometry using 1 keV O2+ at 56° incidence angle is investigated. It is shown that a capping layer of at least 20 nm is needed to ensure a steady‐state erosion rate when profiling the doped region. The matrix intensity is very sensitive to the presence of native oxide, and enhancement is evident for oxides as thin as one monolayer. The oxygen enhancement is further influenced by the high dopant concentration on the sputter surface. The present results favour the model that relates the surface spike present during depth profiling to the sputtering of native oxide. Copyright © 2002 John Wiley & Sons, Ltd.
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