Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks

Dmytro Petryk,Eduardo Perez,Christian Wenger,Ievgen Kabin,Peter Langendorfer,Zoya Dyka,Mamathamba Kalishettyhalli Mahadevaiaha

doi:10.1109/dsd51259.2020.00047

Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks

Dmytro Petryk, Eduardo Perez + Show 5 more

Open Access

https://doi.org/10.1109/dsd51259.2020.00047

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Publication Date: Aug 1, 2020

Citations: 8

Affiliation: Innovations for High Performance Microelectronics, Brandenburg University of Technology Cottbus-Senftenberg

#Optical Fault Injection #Resistive Random Access Memory Cells + Show 8 more

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Abstract

Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation in detail. Experimental results show the feasibility to influence the state of the cells under laser irradiation, i.e. successful optical Fault Injection. We focus on the selection of the parameters of the laser station and their influence on the success of optical Fault Injections.

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