Abstract
A gas electron multiplier with a micro-induction gap amplifying structure (GEM-MIGAS) is formed when a conventional GEM is operated with a short induction gap, typically set at 50 μm. The main aims of this study were to examine the charge amplification in the induction gap of the GEM-MIGAS and then to evaluate the optimum induction gap thickness for achieving the maximum charge amplification in the region. For the present study, the GEM-MIGAS was operated in the gas flow mode using He/iso-C 4H 10 (85/15%). It was also possible to determine the optimum gap thickness, where the dependence of the charge amplification was least sensitive to the small variations of the gap thickness and to the ambient variables, such as pressure and temperature. This was accomplished by setting the voltage across the GEM-holes to a small value as to allow the transfer of electrons from the drift region into the induction region, without incurring multiplication within the holes. Through parametric curve fitting of the charge gain-induction gap voltage characteristics, the optimum induction gap for sustaining highest charge gains was evaluated and compared with trends observed using a conventional Micromegas.
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