Abstract
Within this work, we have studied ultrathin n- and p-type extension implants in order to evaluate the junction delineation accuracy and reproducibility of the SSRM technique on ultra-shallow implants. This is a challenging task since it needs a technique that has simultaneously good sensitivity (<10%), high spatial resolution (1–3 nm) and high dopant gradient resolution (1–2 nm/dec). For every device, two different samples were prepared and measured separately. Unparallel reproducibility capabilities of the technique have been demonstrated as well as a sub-nanometer reproducibility for the lateral diffusion analysis. Regarding junction depths, reproducibility is 1–3 nm where the main uncertainty is the varying silicide thickness.
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