Abstract
Abstract Stacking-fault double ribbons have been observed by transmission electron microscopy in undoped GaP films grown on Si. Values of the extrinsic and intrinsic stacking-fault energies of 40.5 ± 3 mJ m−2 and 43.4 ± 2 mJ m−2, respectively, were obtained from measurements of the widths of the individual ribbons. The ratio of the intrinsic to extrinsic stacking-fault energy was found to be 1.07 ± 0.05.
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