Abstract
The characterization of the electrical parameters of solar cells is fundamental to improve their performance. In the case of a-Si:H thin film solar cells, the degrading effect of light has to be mitigated, among others, with thin absorber layers and light confinement techniques. The novelty of this paper is the development of method that evaluates both, the light trapping enhancement and the collection length of the carriers in these and other field-driven devices. In this research we compared experimental results of a-Si:H cells with our simulation model, obtaining good agreement.
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