Abstract
A variety of CdS/CdTe heterojunction solar cells have been prepared by the vacuum evaporation of n-CdS films onto single-crystal p-CdTe substrates. Comparisons have been made between cells prepared using different substrate resistivities, substrate surface preparations, and CdS film resistivities. The mechanisms controlling the dark junction current, photocarrier collection, and photovoltaic properties with junction interface states present are modeled. A solar efficiency of 7.9% under 85 mW/cm2 of solar simulator illumination was measured on a cell with an indium-tin-oxide coating and a glycerol antireflection coating.
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