Evaluation of the Bonding Strength at the Three-Dimensional Vertex in Silicon-Resin Joints

Abstract

Portable electric devices such as mobile phone and portable music player become compact and also their performance improves. High density packaging technology such as CSP (Chip Size Package) and Stacked-CSP is needed to realize advanced functions. CSP is a bonded structure composed of materials with different properties. A mismatch of material properties may cause stress singularity at the edge of interface, which lead to the failure of bonding part in structures. Singular stress field in residual thermal stresses occurs in a cooling process after bonding the joints at a high temperature. In the present paper, the strength of interface in CSP consisted of silicon and resin is investigated. Boundary element method and an eigen value analysis based on finite element method are used for evaluating the intensity of singularity of residual thermal stresses at a vertex in a three-dimensional joint. Three-dimensional boundary element program based on the fundamental solution for two-phase isotropic body is used for calculating the stress distribution in the three-dimensional joint. Angular function in the singular stress field at the vertex in the three-dimensional joint is calculated using eigen vector determined from eigen analysis. The strength of bonding at the interface in several silicon-resin specimens with different thickness of resin is investigated analytically and experimentally. Stress singular analysis applying an external force for the joints is firstly carried out. After that, singular stress field for the residual thermal stresses varying material property of resin with temperature is calculated. Combining singular stress fields for the external force and the residual thermal stress yields a final stress distribution for evaluating the strength of interface. A relationship between the external force for delamination in joints and the thickness of resin is derived. Finally, a critical intensity of singularity for delamination between silicon and resin is determined.