Abstract

ABSTRACTTensile fatigue behavior of a hot-isostatically-pressed (HIPed) silicon nitride was investigated over ranges of constant stresses, constant stress rates, and cyclic loading at 1150-1370°C. At 1150°C, static and dynamic fatigue failures were governed by a slow crack growth mechanism. Creep rupture was the dominant failure mechanism in static fatigue at 1260 and 1370°C. A transition of failure mechanism from slow crack growth to creep rupture appeared at stress rates ≤10−2MPa/s for dynamic fatigue at 1260 and 1370°C. At 1 150-1370°C, cyclic loading appeared to be less damaging than static loading as cyclic fatigue specimens displayed greater failure times than static fatigue specimens under the same maximum stresses.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.