Abstract
ABSTRACTTensile fatigue behavior of a hot-isostatically-pressed (HIPed) silicon nitride was investigated over ranges of constant stresses, constant stress rates, and cyclic loading at 1150-1370°C. At 1150°C, static and dynamic fatigue failures were governed by a slow crack growth mechanism. Creep rupture was the dominant failure mechanism in static fatigue at 1260 and 1370°C. A transition of failure mechanism from slow crack growth to creep rupture appeared at stress rates ≤10−2MPa/s for dynamic fatigue at 1260 and 1370°C. At 1 150-1370°C, cyclic loading appeared to be less damaging than static loading as cyclic fatigue specimens displayed greater failure times than static fatigue specimens under the same maximum stresses.
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