Evaluation of Surface Defects in Silicon on Insulator using Modified HF Defects and Cu Decoration Method (HCM)

Abstract

The control and evaluation of surface defects are important issues in SOI production. We introduce new a technique which is mixing of the HF dipping and Cu decoration method (HCM). HCM has high sensitivity to detect potential defects, such as small holes, imperfect top Si, imperfect buried oxide (BOX) and isolated BOX layer. Furthermore, the defects can be observed visually, so we can easily find the position and distribution of defects.