Abstract
A sputtering rate near the silicon surface is different from that in the bulk during secondary ion mass spectrometry (SIMS) analysis. It is important to evaluate the sputtering rate change in the transient region in order to obtain the correct depth profile. In this study, we report the sputtering rate change in the transient region under various oxygen bombarding conditions. A sample measured was multiple BN delta layers separated by Si spacing layer. We used MRI analysis applied to SIMS profiles in order to determine the accurate delta positions. In concluding, when the incident angle is smaller than 27° in which SiO 2 is formed, the sputtering rate at the surface is faster than that in the bulk and its difference becomes larger as the primary ion energy becomes larger. When the angle of incidence is 63°, the native oxide at the surface makes the sputtering rate slightly slower than in the bulk.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
