Abstract
In silicon-on-ceramic (SOC) solar cells, the short-circuit current is less than that of single crystal solar cells because of (1) recombination at the grain boundaries and (2) recombination within grains. These two effects can be separated by light-beam-induced-current (LBIC) measurements of the short-circuit current using a finely-focused scanned beam from a monochromator. At any point on the surface of a cell, an effective minority carrier diffusion length can be determined from the spectral response at long wavelengths (0.8 to 1.0 μm). At each grain boundary, an effective surface recombination velocity can be determined. The LBIC technique was used to evaluate the effectiveness of hydrogen plasma treatment for reducing grain boundary recombination in SOC material.
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