Abstract
This paper presents the characteristics of a 1200 V, 33 A SiC MOSFET and a 1200 V, 60 A SiC schottky barrier diode (SBD). The switching characteristics of the devices are tested by a double pulse test (DPT) based on a current-source structure at voltage levels up to 680 V and current up to 20 A. In addition, based on these devices, a 7.5 kW, three-phase buck rectifier for a 400 V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dc</sub> architecture data center power supply is designed. The total loss of this rectifier is calculated full load. The results show that the SiC based buck rectifier can obtain low power loss and smaller weight and volume than a Si based rectifier.
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