Abstract
The U. S. Army Research Laboratory (ARL) has been exploring silicon and silicon carbide Super gate turn-off thyristors (SGTOs) for high power pulse switching required by Army survivability and lethality applications. Silicon SGTOs (3.5 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) were pulsed at 5 kA with a half-sine current waveform measuring 1 ms at the base. The recovery time, or T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">q</sub> , of the devices was evaluated from the point at which the main current pulse fell to zero. Using a driver designed to provide both turn-on and turn-off signals, the T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">q</sub> was reduced to 10 mus. Smaller silicon carbide SGTOs (0.16 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) were similarly evaluated for wide-pulse performance. They were switched several times at a peak current above 300 A, with an unassisted T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">q</sub> time of 30 mus. This paper provides details of the aforementioned pulse switching, as well as a description of continuing evaluations involving parallel devices and larger test beds.
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