Abstract
Electron Beam (EB) lithography is the most attractive tool for the development of the Ultra Large Scale Integrated Circuit (ULSI) devices with the finest pattern rule. It is necessary to estimate precisely the unsteadiness of the pattern positions in EB lithography. We measured shot unsteadiness in EB lithography using conventional overlay (O/L) technology with the one-shot inspection mark. The reproducibility of mark edge detection of the same mark pattern was found to have a standard deviation (σ) of less than 0.3 nano-meters (nm), and the steadiness of shot-positioning was estimated to have a σ of less than 3 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
