Abstract
The results of computation-experimental modeling of single-event latchup effects under the laser radiation focused on the IC crystal backside—the substrate side—are presented. Possibilities of applying the technique of local laser irradiation to evaluate equivalent linear energy transfer of heavy ions in the case of the laser irradiation from the substrate side of IC crystal are analyzed. The experimental results obtained using the pulsed laser installation and accelerators of charged particles for a series of modern LSI ICs are compared.
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