Abstract
The interaction of Ge9As9Se82 and Ge16As24Se60 amorphous chalcogenide thin films with electron beam has been investigated. The kinetics of surface relief formation was determined for both film compositions. It was established that for identical electron beam irradiation parameters, the kinetics of relief formation can be correlated with charge accumulation rate, its final value inside films and charge diffusion away from the electron interaction region. Charge model has been used to explain various phenomena during electron beam interaction with studied systems and parameters of this model are determined. Application of studied systems in single stage electron beam lithography is also presented.
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