Abstract
A Fe-2.8%Si single crystal was scratched in order to randomise the texture in the neighbourhood of the notch. Annealing resulted in recrystallization and grain growth starting from the deformed zone. Misorientations between the single crystal matrix and the grown grains were gathered and were studied in order to investigate the possibility for selective growth based on a specific misorientation. However, instead of studying the misorientation angle or axis profiles separately in a 1D or 2D projection a full misorientation analysis was carried out in the 3-dimensional Rodrigues-Frank misorientation space, which offers an unambiguous interpretation of the data because no features are hidden or masked by a projection. It is concluded that the selective growth phenomenon following the <110>26.5deg misorientation relationship is strongly supported by the gathered orientation data, after appropriately normalizing these data with respect to a random misorientation distribution.
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