Abstract
Zero-bias Schottky barrier height (ϕBp) of reactive-sputtered TiN(∼40nm) on p-type Si(100) was determined at room temperature and the effect of heat treatment was investigated by forward current–voltage (I–V) measurements. The TiN remained amorphous following annealing. The zero-bias barrier heights for the as-deposited and annealed specimens were in the range of 0.53–0.64V. The lower ϕBp values of 0.53–0.54V are related to as-deposited and 673K annealed specimens, whereas the 0.62–0.64V values refer to samples annealed at 773–783K. Forward I–V measurements of as-deposited (300K) TiN∕Si diodes were performed in the temperature range of 220–285K. The barrier height was determined by the activation energy method, resulting in ϕBp=0.58V.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
