Abstract
We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiOx) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiOx on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiOx. The resistive switching behaviors of SiOx show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiOx enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
