Abstract
We evaluated the crystalline quality of the channel region in silicon carbide buried gate static induction transistors (SiC-BGSITs) by transmission electron microscopy (TEM) and scanning spreading resistance microscopy (SSRM). TEM observations revealed that no crystalline defects were generated in the channel region of SiC-BGSITs during epitaxial regrowth in trenches. The SSRM result indicated that the refilled channel region had a spreading resistance distribution of about ten times due to a high noise resulting from contact resistance. This noise was so high that we could not detect carrier density distributions from SSRM signals. However, on the basis of the leakage current and blocking characteristics of the SiC-BGSITs, we confirmed that there was no serious carrier density distribution that affected the device operation in the channel region.
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